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50V 1000V 2.0A​ 50ns Fast Recovery Rectifier Diode

Guangdong Huixin Electronics Technology Co., Ltd.
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50V 1000V 2.0A​ 50ns Fast Recovery Rectifier Diode

Brand Name : Huixin

Model Number : HER204 DO-15

Certification : ISO14001 ISO9001 ISO/TS16949 UL

Place of Origin : China

MOQ : 3000 PCS

Price : Negotiable

Payment Terms : T/T, Paypal, Cash

Supply Ability : 1 billion pieces/ Month

Delivery Time : 2-4Weeks

Packaging Details : 3000pcs/reel/box

Type : Fast Recovery Diode Module

Package : DO - 15

Package Type : Axial

MPQ : 3000PCS

IF : 2A

VRRM : 300V

VF : 1.0V

Recovery Time : 50ns

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Plastic High-Efficiency Rectifiers Reverse Voltage 50 to 1000V Forward Current 2.0A​

HER201~HER208 DO-15 Datasheet.pdf

Features:

  • The plastic package carries Underwriters Laboratory Flammability Classification 94V-0
  • Open Junction chip
  • Low reverse leakage
  • High forward surge current capability
  • High temperature soldering guaranteed:250 C/10 seconds at terminals

Mechanical Data:

  • Case : Molded plastic body
  • Terminals : Solder plated, solderable per MIL-STD-750,Method 2026
  • Polarity : Polarity symbol marking on body
  • Mounting Position : Any
  • Weight : 0.0116 ounce, 0.33 grams

Maximum Ratings And Electrical Characteristics:

Ratings at 25 C ambient temperature unless otherwise specified.Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

Parameter SYMBOLS HER 201 HER 202 HER 203 HER 204 HER 205 HER 206 HER 207 HER 208 UNITS
Maximum repetitive peak reverse voltage VRRM 50 100 200 300 400 600 800 1000 V
Maximum RMS voltage VRMS 35 70 140 210 280 420 560 700 V
Maximum DC blocking voltage VDC 50 100 200 300 400 600 800 1000 V
50V 1000V 2.0A​ 50ns Fast Recovery Rectifier DiodeMaximum average forward rectified current at TL =100 C I(AV) 2.0 A
Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load IFSM 60.0 A
Maximum instantaneous forward voltage at 2.0A VF 1.0 1.4 1.7 V
50V 1000V 2.0A​ 50ns Fast Recovery Rectifier Diode 50V 1000V 2.0A​ 50ns Fast Recovery Rectifier DiodeMaximum DC reverse current T A =25 C at rated DC blocking voltage TA=125 C IR 10.0
500
u A
Maxinum reverse recovery time(Note 1) Trr 50 75 ns
Typical junction capacitance (Note2) CJ 50.0 pF
Typical thermal resistance RqJA 75.0 50V 1000V 2.0A​ 50ns Fast Recovery Rectifier DiodeC/W
Operating junction and storage temperature range TJ,TSTG -55 to +150 50V 1000V 2.0A​ 50ns Fast Recovery Rectifier DiodeC


Note: 1.Reverse recovery time test condition: IF=0.5A IR=1.0A Irr=0.25A

2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.


Product Tags:

50ns Fast Recovery Rectifier Diode

      

2.0A​ Fast Recovery Rectifier Diode

      

1000V Fast Recovery Rectifier

      
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