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800V 5A 35ns 2 Pin Epitaxial Fast Recovery Rectifier Diode Switching

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Guangdong Huixin Electronics Technology Co., Ltd.

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800V 5A 35ns 2 Pin Epitaxial Fast Recovery Rectifier Diode Switching

Name: 800V 5A 35ns 2 Pin Epitaxial Fast Recovery Rectifier Diode Switching
Brand: Huixin
Price: 1 USD

Brand Name : Huixin

Model Number : SF58 DO-27

Certification : ISO14001 ISO9001 ISO/TS16949 UL

Place of Origin : China

MOQ : 1250 PCS

Price : Negotiable

Payment Terms : T/T, Paypal, Cash

Supply Ability : 1 billion pieces/ Month

Delivery Time : 2-4Weeks

Packaging Details : 1000pcs/reel/box

Type : Ultra Fast High Voltage Diode

Package : DO-201AD/ DO-27

Package Type : DIP

MPQ : 1250PCS

Sample Time : 5-7 Days

Max. Forward Current : 5A

Max. Reverse Voltage : 800V

Product Name : Fast Recovery Epitaxial Rectifier Diode Switching 800V 5A 35ns 2-Pin DO-201AD

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Fast Recovery Epitaxial Rectifier Diode Switching 800V 5A 35ns 2-Pin DO-201AD

SF51~SF58
5.0Amp Super Fast Silicon Rectifiers

SF51~SF58 DO-27 Datasheet.pdf

Features:

The plastic package carries Underwriters Laboratory Flammability Classification 94V-0
Open Junction chip Low reverse leakage
High forward surge current capability High temperature soldering guaranteed
250 C/10 seconds at terminals

Mechanical Data:

Case : Molded plastic body
Terminals : Solder plated, solderable per MIL-STD-750,Method 2026
Polarity : Polarity symbol marking on body
Mounting Position : Any
Weight : 0.0345 ounce, 0.98 grams

Maximum Ratings And Electrical Characteristics:

Ratings at 25 C ambient temperature unless otherwise specified.Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

Parameter	SYMBOLS	SF51	SF52	SF53	SF54	SF55	SF56	SF57	SF58	UNITS
Maximum repetitive peak reverse voltage	VRRM	50	100	150	200	300	400	500	600	V
Maximum RMS voltage	VRMS	35	70	105	140	210	280	350	420	V
Maximum DC blocking voltage	VDC	50	100	150	200	300	400	500	600	V
Maximum average forward rectified current at TL =100 C	I(AV)	5.0								A
Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load	IFSM	200.0								A
Maximum instantaneous forward voltage at 5.0A	VF	0.95				1.25		1.7		V
Maximum DC reverse current T A =25 C at rated DC blocking voltage TA=125 C	IR	10.0 500								u A
Maxinum reverse recovery time(Note 1)	Trr	35								ns
Typical junction capacitance (Note2)	CJ	80.0								pF
Typical thermal resistance	RqJA	45.0								C/W
Operating junction and storage temperature range	TJ,TSTG	-55 to +150								C

Note: 1.Reverse recovery condition IF =0.5A,IR =1.0A,Irr=0.25A

2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

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Product Tags:

Epitaxial Fast Recovery Rectifier Diode

35ns Fast Recovery Rectifier Diode

800V Epitaxial Rectifier Diode

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