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Plastic N Channel BC3400 350mW 5.8A Low Voltage Mosfet

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Guangdong Huixin Electronics Technology Co., Ltd.

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Plastic N Channel BC3400 350mW 5.8A Low Voltage Mosfet

Name: Plastic N Channel BC3400 350mW 58A Low Voltage Mosfet
Brand: Huixin
Price: 1 USD

Plastic N Channel BC3400 350mW 5.8A Low Voltage Mosfet Manufactures

Brand Name : Huixin

Model Number : BC3400

Certification : ISO9001, ISO4001, IATF16949, UL

Place of Origin : China

MOQ : 3000pcs

Price : Negotiable

Payment Terms : T/T, Paypal, Cash

Supply Ability : 1 billion pieces/ Month

Delivery Time : 2-4Weeks

Packaging Details : 3000pcs / Reel

Type : BC3400 N Channel MOSFET

Drain-Source Voltage : 30V

Continuous Drain Current : 5.8A

MPQ : 3000PCS

Sample Time : 5-7 Days

Sample : Free

Lead Time : 2-4Weeks

Lead Free Status : RoHS

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SOT-23 Plastic-Encapsulate MOSFETS

BC3400 N-Channel Enhancement Mode Field Effect Transistor

BC3400 SOT-23 Datasheet.pdf

FEATURES

High dense cell design for extremely low RDS(ON)

Exceptional on-resistance and maximum DC current capability

Maximum ratings ( Ta=25℃ unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain-Source Voltage

VDS

Gate-Source Voltage

VGS

±12

Continuous Drain Current

5.8

Drain Current-Pulsed (note 1)

IDM

Power Dissipation

350

Thermal Resistance from Junction to Ambient (note 2)

RθJA

357

℃/W

Junction Temperature

150

℃

Storage Temperature

TSTG

-55~+150

℃

Electrical characteristics (Ta=25℃ unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Typ

Max

Units

Off Characteristics

Drain-source breakdown voltage

V(BR) DSS

VGS = 0V, ID =250µA

Zero gate voltage drain current

IDSS

VDS =24V,VGS = 0V

µA

Gate-source leakage current

IGSS

VGS =±12V, VDS = 0V

±100

On characteristics

Drain-source on-resistance (note 3)

RDS(on)

VGS =10V, ID =5.8A

mΩ

VGS =4.5V, ID =5A

mΩ

Forward tranconductance

gFS

VDS =5V, ID =5A

Gate threshold voltage

VGS(th)

VDS =VGS, ID =250µA

0.7

1.4

Dynamic Characteristics (note 4,5)

Input capacitance

Ciss

VDS =15V,VGS =0V,f =1MHz

1050

Output capacitance

Coss

Reverse transfer capacitance

Crss

Gate resistance

VDS =0V,VGS =0V,f =1MHz

3.6

Ω

Switching Characteristics (note 4,5)

Turn-on delay time

td(on)

VGS=10V,VDS=15V, RL=2.7Ω,RGEN=3Ω

Turn-on rise time

Turn-off delay time

td(off)

Turn-off fall time

Drain-source diode characteristics and maximum ratings

Diode forward voltage (note 3)

VSD

IS=1A,VGS=0V

Note :
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t < 5 sec.
3. Pulse Test : Pulse Width≤300µs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.

Product Tags:

5.8A Low Voltage Mosfet

350mW Low Voltage Mosfet

BC3400 Plastic Encapsulate MOSFETS

Plastic N Channel BC3400 350mW 5.8A Low Voltage Mosfet Images

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