Home > Low Voltage Mosfet >

0.35W N Channel 0.22A BSS138 Field Transistor Mosfets

Product Categories

Fast Recovery Rectifier Diode [57]
General Purpose Rectifier Diode [35]
Schottky Barrier Rectifier Diode [45]
Zener Diode [19]
SMD Transistor [8]
Silicon Bridge Rectifier [12]
High Speed Switching Diode [7]
TVS Transient Voltage Suppressor Diode [8]
Low VF Schottky Diode [1]
ESD Suppressor Diode [1]
Low Voltage Mosfet [4]
High Voltage Mosfet [1]

Guangdong Huixin Electronics Technology Co., Ltd.

Contact Now

0.35W N Channel 0.22A BSS138 Field Transistor Mosfets

Name: 035W N Channel 022A BSS138 Field Transistor Mosfets
Brand: Huixin
Price: 1 USD

Brand Name : Huixin

Model Number : BSS138

Certification : ISO9001, ISO4001, IATF16949, UL

Place of Origin : China

MOQ : 3000pcs

Price : Negotiable

Payment Terms : T/T, MoneyGram

Supply Ability : 1 billion pieces/ Month

Delivery Time : 4-5Weeks

Packaging Details : 3000pcs / Reel

Type : N-Channel 50-V(D-S) MOSFET

Material : Silicon

Package : SOT-23

Drain-Source Voltage : 50V

Continuous Drain Current : 0.22A

Power Dissipation : 0.35W

Applications : Drivers: Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors, etc.

Features : Rugged and Reliable

Contact Now

SOT-23 Plastic-Encapsulate MOSFETS

BSS138 N-Channel 50-V(D-S) MOSFET

V(BR)DSS

RDS(on)MAX

50 V

3.5Ω@10V

220mA

6Ω@4.5V

BSS138 SOT-23 Datasheet.pdf

FEATURES

1.High density cell design for extremely low RDS(on)
2.Rugged and Relaible

APPLICATIONS

1.Direct Logic-Level Interface: TTL/CMOS
2.Drivers: Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors, etc.
3.Battery Operated Systems
4.Solid-State Relays

Maximum ratings (Ta=25℃ unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain-Source Voltage

VDS

Continuous Gate-Source Voltage

VGSS

±20

Continuous Drain Current

0.22

Power Dissipation

0.35

Thermal Resistance from Junction to Ambient

RθJA

357

℃/W

Operating Temperature

150

℃

Storage Temperature

Tstg

-55 ~+150

ELECTRICAL CHARACTERISTICS (Ta=25 ℃ unless otherwise specified )

Parameter

Symbol

Test Condition

Min

Typ

Max

Units

Off characteristics

Drain-source breakdown voltage

V(BR)DSS

VGS = 0V, ID =250µA

Gate-body leakage

IGSS

VDS =0V, VGS =±20V

±100

Zero gate voltage drain current

IDSS

VDS =50V, VGS =0V

0.5

µA

VDS =30V, VGS =0V

100

On characteristics

Gate-threshold voltage (note 1)

VGS(th)

VDS =VGS, ID =1mA

0.80

1.50

Static drain-source on-resistance (note 1)

RDS(on)

VGS =10V, ID =0.22A

3.50

Ω

VGS =4.5V, ID =0.22A

Forward transconductance (note 1)

gFS

VDS =10V, ID =0.22A

0.12

Dynamic characteristics (note 2)

Input capacitance

Ciss

VDS =25V,VGS =0V, f=1MHz

Output capacitance

Coss

Reverse transfer capacitance

Crss

Switching characteristics

Turn-on delay time (note 1,2)

td(on)

VDD=30V, VDS=10V, ID =0.29A,RGEN=6Ω

Rise time (note 1,2)

Turn-off delay time (note 1,2)

td(off)

Fall time (note 1,2)

Drain-source body diode characteristics

Body diode forward voltage (note 1)

VSD

IS=0.44A, VGS = 0V

1.4

Notes:
1. Pulse Test ; Pulse Width ≤300µs, Duty Cycle ≤2%.
2. These parameters have no way to verify.

Product Tags:

BSS138 Field Transistor Mosfets

0.22A Field Transistor Mosfets

0.35W N Channel Mosfet

0.35W N Channel 0.22A BSS138 Field Transistor Mosfets Manufactures

0.35W N Channel 0.22A BSS138 Field Transistor Mosfets Images

Inquiry Cart 0

Send your message to this supplier


*From:	Your email address is incorrect!
*To:	Guangdong Huixin Electronics Technology Co., Ltd.
*Subject:	Subject is empty!
*Message:	For the best results, we recommend including the following details: -Self introduction -Required specifications -Inquire about price/MOQ Characters Remaining: (0/3000) Please enter 20 to 3000 characters to contact this supplier!